Effect of temperature on In_x Ga_(1-x) As/GaAs quantum dot lasing

摘要

In this paper, the strain, band-edge, and energy levels of pyramidal In_xGa_(1-x) As/GaAs quantum dot lasers (QDLs) are investigated by 1-band effectivemass approach. It is shown that while temperature has no remarkable effect onthe strain tensor, the band gap lowers and the radiation wavelength elongatesby rising temperature. Also, band-gap and laser energy do not linearly decreaseby temperature rise. Our results appear to coincide with former researches. Keywords: quantum dot laser, strain tensor, band edge, nano-electronics,temperature effect